Optical Investigation of Proton‐Irradiated Metal Organic Chemical Vapor Deposition AlGaN/GaN High‐Electron‐Mobility Transistor Structures
نویسندگان
چکیده
منابع مشابه
InGaN channel high electron mobility transistor structures grown by metal organic chemical vapor deposition
High electron mobility transistor (HEMT) structures of AlInGaN/AlN/InGaN/GaN were grown by metal-organic chemical vapor deposition. A combination of low growth rate and high growth temperature during synthesis of the InGaN channel layer led to significant improvement in HEMT electron transport properties. The improvement was correlated with an evolution of both surface roughness and photolumine...
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متن کاملThe structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition.
Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12 000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were ...
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ژورنال
عنوان ژورنال: physica status solidi (b)
سال: 2020
ISSN: 0370-1972,1521-3951
DOI: 10.1002/pssb.201900573